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600V 46A 0.083 APT47N60BCF APT47N60SCF APT47N60BCFG* APT47N60SCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C OLMOS O
Power Semiconductors
Super Junction FREDFET
(B)
TO -2 47
D3PAK
* Ultra Low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * Extreme dv/dt Rated
* Intrinsic Fast-Recovery Body Diode * Extreme Low Reverse Recovery Charge * Ideal For ZVS Applications * Popular TO-247 or Surface Mount D3 Package
(S)
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT47N60B_SCF(G) 600 46 29 115 30 417 1.67 -55 to 150 260 80 20
2 3
UNIT Volts
Amps
Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 46A, TJ = 125C) Avalanche Current
2
Volts Watts W/C C V/ns Amps mJ
Repetitive Avalanche Energy
1 1800
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol B(VR)DS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
4
MIN 600
TYP
MAX
UNIT Volts
(VGS = 10V, ID = 29A)
0.083 6 5000 100 3 4 5
Ohms A nA Volts
12-2005 050-7237 Rev A
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.9mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgd td(on) td(off) tf Eon Eoff Eon Eoff Symbol IS VSD
dv
APT47N60BCF_SCF(G)
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 46A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 380V ID = 46A @ 25C RG = 3.6
6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
5
MIN
TYP
MAX
UNIT pF
7290 1735 41 255 43 135 30 30 100 15 885 590 1270 725
MIN TYP MAX
Qgs
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
dv
1 4
nC
tr
ns
INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 46A, RG = 4.3 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 46A, RG = 4.3
6
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
46 115 1.2 40
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN 210
ISM
(Body Diode) (VGS = 0V, IS = -46A)
7
/dt
/dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -46A, di/dt = 100A/s) Reverse Recovery Charge (IS = -46A, /dt = 100A/s) Peak Recovery Current (IS = -46A, /dt = 100A/s) Characteristic Junction to Case Junction to Ambient
4 5 6 7
di di
350 2.0 5.4 18 28
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.30 62
Pulse Test: Pulse width < 380 s, Duty Cycle < 2% See MIL-STD-750 Method 3471 Eon includes diode reverse recovery. See figures 18, 20. Maximum 125C diode commutation speed = di/dt 600A/s
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f 3 Starting Tj = +25C, L = 36.0mH, RG = 25, Peak IL = 10A
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 , THERMAL IMPEDANCE (C/W) 0.30 D = 0.9 0.25 0.20 0.15 0.10 0.05 0 0.7
12-2005
0.5 0.3
Note:
PDM
050-7237 Rev A
t1 t2
JC
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
Z
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
60 50 40 30 20 10 0
APT47N60BCF_SCF(G)
15, 10 & 7.5V 7V 6.5V
RC MODEL Junction temp. (C) 0.143 Power (watts) 0.157 Case temperature. (C) 0.133 0.00841
6V
5.5V
5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
80
0 2 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 1.40 1.30 1.20
VGS=10V
NORMALIZED TO VGS = 10V @ 23A
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
ID, DRAIN CURRENT (AMPERES)
70 60 50 40 30 20 10 0
TJ = -55C
1.10 1.00 0.90 0.80
VGS=20V
TJ = +25C
TJ = +125C
012 34 56 78 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
45
40 35 30 25 20 15 10 5 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
50
1.15
20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
2.5
I = 23A
D
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.15
0.90 -50
V
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
= 10V
1.10 1.05 1.00 0.95 0.90 12-2005 050-7237 Rev A 0.85 0.80 0.75 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.70 -50
1.5
1.0
0.5
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 -50
115 ID, DRAIN CURRENT (AMPERES) 50
OPERATION HERE LIMITED BY R (ON) DS
404 104 C, CAPACITANCE (pF)
APT47N60BCF_SCF(G)
Ciss
100S 10 5 TC =+25C TJ =+150C SINGLE PULSE
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
103 Coss 102 Crss
1mS
10mS
1
0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
101
I = 46A
D
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16 14 12 10 8 6 4 2 0
0
200 100
TJ =+150C TJ =+25C
VDS=120V VDS=300V
10
VDS=480V
50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 300
250
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 90
80 70
td(off)
td(on) and td(off) (ns)
200 150 100 50 0
V
R
G
= 4.3
tr and tf (ns)
DD
= 400V
60 50
V
tf
DD G
T = 125C J L = 100H
= 400V
40 30 20
R
= 4.3
T = 125C J L = 100H
tr
td(on) 0 10 20 30 40 50 ID (A) 60 70 80
10 0
0
10
20
30
FIGURE 14, DELAY TIMES vs CURRENT
2500
V
DD G
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3500
Eoff
40 50 ID (A)
60
70
80
= 400V
R
= 4.3
SWITCHING ENERGY (mJ)
L = 100H E diode reverse recovery.
on
SWITCHING ENERGY (mJ)
2000
T = 125C
J
3000 2500 2000 1500
V
includes
Eon
1500
Eon
1000
Eoff
12-2005
1000 500
DD
= 400V
I = 46A
D
500
T = 125C L = 100H E diode reverse recovery.
on J
050-7237 Rev A
includes
40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
10
20
30
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
90%
APT47N60BCF_SCF(G)
10%
Gate Voltage TJ125C
Gate Voltage
TJ125C
td(on)
td(off)
tr
90%
Drain Current
90%
tf
Drain Voltage
5% 10%
Switching Energy
5%
Drain Voltage
10% 0
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DQ60
VDD
ID
VDS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
e3 100% Sn
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7237 Rev A
Gate Drain Source
Heat Sink (Drain) and Leads are Plated
12-2005
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055)
3.81 (.150) 4.06 (.160) (Base of Lead)

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